Abstract: A 2b/cell flash memory in 90 nm triple-well CMOS technology achieves 1.5 MB/s programming and 166 MHz synchronous operation. The design features 2-row programming, optimized program control ...
Abstract: This study demonstrated the thermally-assisted (TA) programming of a NOR flash memory device, which was composed of a junctionless silicon nanowire with gate-all-around structure. Fast ...
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