Abstract: This paper presents a 16-element 5G FR2 n260/n259 phased-array transmitter front-end integrated circuit implemented in a 28-nm CMOS fully depleted silicon on insulator device technology. A ...
Abstract: This letter describes the reduction of optical crosstalk by means of focused ion beam-etched trenches in InGaAs/InP single-photon avalanche diode arrays. Platinum-filled trenches have been ...
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