Abstract: This study demonstrated the thermally-assisted (TA) programming of a NOR flash memory device, which was composed of a junctionless silicon nanowire with gate-all-around structure. Fast ...
Abstract: For the first time, a programming mechanism for conventional source-side injection (SSI) (normal mode), substrate-bias enhanced SSI (body mode), and dynamic-threshold SSI (DTSSI) (DT mode) ...
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